Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Dae Hyeong Kim, Won Mook Choi, Jong Hyun Ahn, Hoon Sik Kim, Jizhou Song, Yonggang Huang, Zhuangjian Liu, Chun Lu, Chan Ghee Koh, John A. Rogers

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

Original languageEnglish (US)
Article number044102
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
StatePublished - Aug 15 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, D. H., Choi, W. M., Ahn, J. H., Kim, H. S., Song, J., Huang, Y., Liu, Z., Lu, C., Koh, C. G., & Rogers, J. A. (2008). Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects. Applied Physics Letters, 93(4), [044102]. https://doi.org/10.1063/1.2963364