Abstract
We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.
Original language | English (US) |
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Pages (from-to) | 4706-4710 |
Number of pages | 5 |
Journal | IEEE Transactions on Magnetics |
Volume | 44 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2008 |
Externally published | Yes |
Keywords
- Ferromagnet
- Hysteresis
- Magneto-electronics
- Magneto-resistance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials