Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.

Original languageEnglish (US)
Pages (from-to)4706-4710
Number of pages5
JournalIEEE Transactions on Magnetics
Volume44
Issue number12
DOIs
StatePublished - Dec 1 2008
Externally publishedYes

Keywords

  • Ferromagnet
  • Hysteresis
  • Magneto-electronics
  • Magneto-resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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