Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

J. U. Bae; T. Y. Lin; Y. Yoon; S. J. Kim; J. P. Bird; A. Imre; W. Porod; J. L. Reno

doi:10.1109/TMAG.2008.2002924

Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.

Original language	English (US)
Pages (from-to)	4706-4710
Number of pages	5
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	12
DOIs	https://doi.org/10.1109/TMAG.2008.2002924
State	Published - Dec 2008
Externally published	Yes

Keywords

Ferromagnet
Hysteresis
Magneto-electronics
Magneto-resistance

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/TMAG.2008.2002924

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@article{58c8018517e341978c8812c0f99004ba,

title = "Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices",

abstract = "We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.",

keywords = "Ferromagnet, Hysteresis, Magneto-electronics, Magneto-resistance",

author = "Bae, {J. U.} and Lin, {T. Y.} and Y. Yoon and Kim, {S. J.} and Bird, {J. P.} and A. Imre and W. Porod and Reno, {J. L.}",

note = "Funding Information: This work was supported by the Department of Energy and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences, Nanoscale Science Research Center. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract DE-AC04-94AL85000.",

year = "2008",

month = dec,

doi = "10.1109/TMAG.2008.2002924",

language = "English (US)",

volume = "44",

pages = "4706--4710",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

AU - Bae, J. U.

AU - Lin, T. Y.

AU - Yoon, Y.

AU - Kim, S. J.

AU - Bird, J. P.

AU - Imre, A.

AU - Porod, W.

AU - Reno, J. L.

N1 - Funding Information: This work was supported by the Department of Energy and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences, Nanoscale Science Research Center. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract DE-AC04-94AL85000.

PY - 2008/12

Y1 - 2008/12

N2 - We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.

AB - We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.

KW - Ferromagnet

KW - Hysteresis

KW - Magneto-electronics

KW - Magneto-resistance

UR - http://www.scopus.com/inward/record.url?scp=77955084898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955084898&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2008.2002924

DO - 10.1109/TMAG.2008.2002924

M3 - Article

AN - SCOPUS:77955084898

VL - 44

SP - 4706

EP - 4710

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 12

ER -

Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

Abstract

Keywords

ASJC Scopus subject areas

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