Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

J. U. Bae; T. Y. Lin; Y. Yoon; S. J. Kim; J. P. Bird; A. Imre; W. Porod; J. L. Reno

doi:10.1109/TMAG.2008.2002924

Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices

J. U. Bae, T. Y. Lin, Y. Yoon, S. J. Kim, J. P. Bird, A. Imre, W. Porod, J. L. Reno

Research output: Contribution to journal › Article

3 Scopus citations

Abstract

We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.

Original language	English (US)
Pages (from-to)	4706-4710
Number of pages	5
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	12
DOIs	https://doi.org/10.1109/TMAG.2008.2002924
State	Published - Dec 1 2008
Externally published	Yes

Keywords

Ferromagnet
Hysteresis
Magneto-electronics
Magneto-resistance

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Bae, J. U., Lin, T. Y., Yoon, Y., Kim, S. J., Bird, J. P., Imre, A., Porod, W., & Reno, J. L. (2008). Characterization of nanomagnet fringing fields in hybrid semiconductor/ferromagnetic devices. IEEE Transactions on Magnetics, 44(12), 4706-4710. https://doi.org/10.1109/TMAG.2008.2002924

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abstract = "We describe the fabrication of a hybrid nanomagneto-electronic device, consisting of a GaAs/AlGaAs quantum wire that is bridged by a ferromagnetic gate, and study the influence of the nanomagnet fringing fields on the quantum-wire magneto-resistance. The nonplanar gate shows clear single-domain structure in magnetic-force microscopy, and a simple magnetization behavior in an external magnetic field. This behavior is reflected as a hysteretic variation of the quantum-wire magneto-resistance, whose magnitude is found to be consistent with theoretical predictions for ballistic electron transport through a spatially varying magnetic field.",

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AU - Bae, J. U.

AU - Lin, T. Y.

AU - Yoon, Y.

AU - Kim, S. J.

AU - Bird, J. P.

AU - Imre, A.

AU - Porod, W.

AU - Reno, J. L.

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