Characterization of iridium thin films for TES microcalorimeters

Daniel F. Bogorin, M. Galeazzi

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We are developing transition edge sensors (TES) using single layer iridium (Ir) as the detector and deposited tin (Sn) as the absorber. We obtained good Ir devices with reproducible and uniform transition temperature around 120 mK, transition widths of 1-2 mK, residual resistivity ratio (RRR) between 1.8-3 and high sensitivity α. Our Ir films are obtained using radio frequency (RF) magnetron sputtering and photolithography. In this paper we present a full low temperature characterization of the Ir films.

Original languageEnglish (US)
Pages (from-to)167-172
Number of pages6
JournalJournal of Low Temperature Physics
Issue number1-2 PART 1
StatePublished - Apr 1 2008


  • Critical current
  • Iridium
  • Superconductor
  • Transition edge sensors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics


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