TY - JOUR
T1 - Anomalous Hall and Nernst effects in epitaxial films of topological kagome magnet Fe3Sn2
AU - Khadka, Durga
AU - Thapaliya, T. R.
AU - Hurtado Parra, Sebastian
AU - Wen, Jiajia
AU - Need, Ryan
AU - Kikkawa, James M.
AU - Huang, S. X.
N1 - Funding Information:
S.H.P. and J.M.K. acknowledge the support by the Penn NSF MRSEC DMR-1720530. J.W. acknowledges the support by the Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under contract DE-AC02-76SF00515.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/8
Y1 - 2020/8
N2 - The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure, strong electron correlations, and magnetism. Here we report the synthesis of high-quality epitaxial (0001) Fe3Sn2 films with large intrinsic anomalous Hall effect close to that measured in bulk single crystals. In addition, we measured a large, anisotropic anomalous Nernst coefficient Syx of 1.26μVK-1, roughly 2-5 times greater than that of common ferromagnets, suggesting the presence of Berry curvature sources near the Fermi level in this system. Crucially, the realization of high-quality Fe3Sn2 films opens the door to explore emergent interfacial physics and create novel spintronic devices based on TKMs by interfacing Fe3Sn2 with other quantum materials and by nanostructure patterning.
AB - The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure, strong electron correlations, and magnetism. Here we report the synthesis of high-quality epitaxial (0001) Fe3Sn2 films with large intrinsic anomalous Hall effect close to that measured in bulk single crystals. In addition, we measured a large, anisotropic anomalous Nernst coefficient Syx of 1.26μVK-1, roughly 2-5 times greater than that of common ferromagnets, suggesting the presence of Berry curvature sources near the Fermi level in this system. Crucially, the realization of high-quality Fe3Sn2 films opens the door to explore emergent interfacial physics and create novel spintronic devices based on TKMs by interfacing Fe3Sn2 with other quantum materials and by nanostructure patterning.
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U2 - 10.1103/PhysRevMaterials.4.084203
DO - 10.1103/PhysRevMaterials.4.084203
M3 - Article
AN - SCOPUS:85092166136
VL - 4
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 8
M1 - 084203
ER -