Abstract
Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 764-769 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 37 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1 2008 |
| Externally published | Yes |
Keywords
- Annealing
- Laser annealing
- Metal-semiconductor- metal
- Nitrogen annealing
- Photodetector
- RTA
- Solar cell
- Sputtering
- ZnO
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
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Cite this
Yen, T., Strome, D., Kim, S. J., Cartwright, A. N., & Anderson, W. A. (2008). Annealing studies on zinc oxide thin films deposited by magnetron sputtering. Journal of Electronic Materials, 37(5), 764-769. https://doi.org/10.1007/s11664-007-0357-4