Abstract
Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.
Original language | English (US) |
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Pages (from-to) | 764-769 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 37 |
Issue number | 5 |
DOIs | |
State | Published - May 1 2008 |
Externally published | Yes |
Keywords
- Annealing
- Laser annealing
- Metal-semiconductor- metal
- Nitrogen annealing
- Photodetector
- RTA
- Solar cell
- Sputtering
- ZnO
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Physics and Astronomy (miscellaneous)