Annealing studies on zinc oxide thin films deposited by magnetron sputtering

Tingfang Yen; Dave Strome; Sung Jin Kim; Alexander N. Cartwright; Wayne A. Anderson

doi:10.1007/s11664-007-0357-4

Annealing studies on zinc oxide thin films deposited by magnetron sputtering

Tingfang Yen, Dave Strome, Sung Jin Kim, Alexander N. Cartwright, Wayne A. Anderson

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm ². Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO ₂ insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.

Original language	English (US)
Pages (from-to)	764-769
Number of pages	6
Journal	Journal of Electronic Materials
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s11664-007-0357-4
State	Published - May 1 2008
Externally published	Yes

Keywords

Annealing
Laser annealing
Metal-semiconductor- metal
Nitrogen annealing
Photodetector
RTA
Solar cell
Sputtering
ZnO

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Science(all)
Physics and Astronomy (miscellaneous)

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10.1007/s11664-007-0357-4

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title = "Annealing studies on zinc oxide thin films deposited by magnetron sputtering",

abstract = "Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of{\~ } 1:1 at a depth of 100 {\AA}, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 {\AA}) was added between the ZnO and Si to study potential solar cell applications.",

keywords = "Annealing, Laser annealing, Metal-semiconductor- metal, Nitrogen annealing, Photodetector, RTA, Solar cell, Sputtering, ZnO",

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AU - Yen, Tingfang

AU - Strome, Dave

AU - Kim, Sung Jin

AU - Cartwright, Alexander N.

AU - Anderson, Wayne A.

PY - 2008/5/1

Y1 - 2008/5/1

N2 - Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.

AB - Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.

KW - Annealing

KW - Laser annealing

KW - Metal-semiconductor- metal

KW - Nitrogen annealing

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KW - Solar cell

KW - Sputtering

KW - ZnO

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