Annealing studies on zinc oxide thin films deposited by magnetron sputtering

Tingfang Yen, Dave Strome, Sung Jin Kim, Alexander N. Cartwright, Wayne A. Anderson

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of ̃ 1:1 at a depth of 100 Å, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm 2. Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO 2 insulator layer (10 to 20 Å) was added between the ZnO and Si to study potential solar cell applications.

Original languageEnglish (US)
Pages (from-to)764-769
Number of pages6
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - May 1 2008
Externally publishedYes

Keywords

  • Annealing
  • Laser annealing
  • Metal-semiconductor- metal
  • Nitrogen annealing
  • Photodetector
  • RTA
  • Solar cell
  • Sputtering
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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