Using the envelope-function approach, we present a theoretical analysis of the effects of uniaxial stress applied along the  direction on the zone-center valence states of a type-I GaAs/(Formula presented)(Formula presented)As  quantum well. The resulting strain reduces the symmetry and causes mixing between heavy and light holes which can be described approximately within the (Formula presented) subspace by a 4×4 Luttinger-Kohn Hamiltonian in conjunction with the correct 4×4 Bir-Pikus strain Hamiltonian. An approximate analytic solution is found by expanding the finite-stress solutions in terms of the zero-stress eigenstates. This representation allows a detailed analysis of the strain-induced coupling terms between heavy and light holes. By neglecting all small coupling terms it is possible to describe the hole mixing at any stress in terms of independent two-level systems. In this case the Hamiltonian becomes block diagonal and can easily be diagonalized analytically. Within the experimentally accessible pressure range of 10 kbar, these simple analytic solutions deviate from the large-scale numerical solutions by less than 1%. The coupling of the spin-orbit split-off states in the (Formula presented) subspace to the (Formula presented) subspace at finite and zero stress is then taken into account via second-order perturbation theory. Comparison of the theoretical results with experimental photoluminescence data shows good agreement and provides strong evidence for the stress-induced hole mixing.
|Original language||English (US)|
|Number of pages||12|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics