Abstract
In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins. After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 315-320 |
| Number of pages | 6 |
| Volume | 957 |
| State | Published - Jun 29 2007 |
| Externally published | Yes |
| Event | 2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Nov 30 2006 |
Other
| Other | 2006 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/27/06 → 11/30/06 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. / Yen, Tingfang; Li, Meiya; Chokshi, Nehal; Kim, Sung Jin; Cartwright, Alexander N.; Jeong, Yongwoo; Anderson, Wayne A.
Materials Research Society Symposium Proceedings. Vol. 957 2007. p. 315-320.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques
AU - Yen, Tingfang
AU - Li, Meiya
AU - Chokshi, Nehal
AU - Kim, Sung Jin
AU - Cartwright, Alexander N.
AU - Jeong, Yongwoo
AU - Anderson, Wayne A.
PY - 2007/6/29
Y1 - 2007/6/29
N2 - In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins. After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.
AB - In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins. After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.
UR - http://www.scopus.com/inward/record.url?scp=34250838095&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250838095&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:34250838095
SN - 0762313951
SN - 9780762313952
VL - 957
SP - 315
EP - 320
BT - Materials Research Society Symposium Proceedings
ER -