Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques

Tingfang Yen, Meiya Li, Nehal Chokshi, Sung Jin Kim, Alexander N. Cartwright, Yongwoo Jeong, Wayne A. Anderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins. After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages315-320
Number of pages6
Volume957
StatePublished - Jun 29 2007
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Nov 30 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0611/30/06

Fingerprint

Sputtering
Molecular beams
Semiconductor materials
Lasers
Thin films
Solar cells
Metals
Dark currents
Polycrystals
Optical devices
Photodetectors
Photocurrents
Stoichiometry
Heterojunctions
Laser pulses
Refractive index
Electric properties
Energy gap
Optical properties
Gases

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yen, T., Li, M., Chokshi, N., Kim, S. J., Cartwright, A. N., Jeong, Y., & Anderson, W. A. (2007). Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. In Materials Research Society Symposium Proceedings (Vol. 957, pp. 315-320)

Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. / Yen, Tingfang; Li, Meiya; Chokshi, Nehal; Kim, Sung Jin; Cartwright, Alexander N.; Jeong, Yongwoo; Anderson, Wayne A.

Materials Research Society Symposium Proceedings. Vol. 957 2007. p. 315-320.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yen, T, Li, M, Chokshi, N, Kim, SJ, Cartwright, AN, Jeong, Y & Anderson, WA 2007, Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. in Materials Research Society Symposium Proceedings. vol. 957, pp. 315-320, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Yen T, Li M, Chokshi N, Kim SJ, Cartwright AN, Jeong Y et al. Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. In Materials Research Society Symposium Proceedings. Vol. 957. 2007. p. 315-320
Yen, Tingfang ; Li, Meiya ; Chokshi, Nehal ; Kim, Sung Jin ; Cartwright, Alexander N. ; Jeong, Yongwoo ; Anderson, Wayne A. / Analysis and applications of ZnO semiconductor films deposited by laser and sputtering techniques. Materials Research Society Symposium Proceedings. Vol. 957 2007. pp. 315-320
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