Alternative method for determining the shear deformation potential of the valence band in III-V semiconductor quantum wells

G. Rau, P. C. Klipstein, V. Nikos Nicopoulos, N. F. Johnson, W. R. Tribe

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We present an alternative method for determining the shear deformation potential b of the valence band in III-V semiconductors. Instead of bulk semiconductors we use quantum well structures and apply uniaxial stress perpendicular to the growth direction. Using analytical solutions wo show that the first confined hole state has a pronounced and characteristic nonlinear energy shift with respect to stress. This allows the hydrostatic and shear deformation potentials a and b to be determined independently from the stress dependence of the bandgap only, which can be measured by a wider range of experimental techniques than those necessary for obtaining deformation potentials from bulk material. Measurements on a (GaAs)10/(AlAs)10 superlattice yielded a value for b which is in good agreement with recent results from bulk measurements and hence support the validity of our proposed method.

Original languageEnglish (US)
Pages (from-to)343-348
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume198
Issue number1
DOIs
StatePublished - Nov 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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