Abstract
We present an alternative method for determining the shear deformation potential b of the valence band in III-V semiconductors. Instead of bulk semiconductors we use quantum well structures and apply uniaxial stress perpendicular to the growth direction. Using analytical solutions wo show that the first confined hole state has a pronounced and characteristic nonlinear energy shift with respect to stress. This allows the hydrostatic and shear deformation potentials a and b to be determined independently from the stress dependence of the bandgap only, which can be measured by a wider range of experimental techniques than those necessary for obtaining deformation potentials from bulk material. Measurements on a (GaAs)10/(AlAs)10 superlattice yielded a value for b which is in good agreement with recent results from bulk measurements and hence support the validity of our proposed method.
Original language | English (US) |
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Pages (from-to) | 343-348 |
Number of pages | 6 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 198 |
Issue number | 1 |
DOIs | |
State | Published - Nov 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics