Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor

E. A. Henriksen, S. Syed, Y. Ahmadian, M. J. Manfra, K. W. Baldwin, A. M. Sergent, R. J. Molnar, H. L. Stormer

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We report on the temperature dependence of the mobility μ of the two-dimensional (2D) electron gas in a variable density AlGaN/GaN field-effect transistor, with carrier densities ranging from 0.4 × 10 12 to 3.0 × 10 12 cm -2 and a peak mobility of 80 000 cm 2/V s. Between 20 and 50 K we observe a linear dependence μ zc -1 = αT, indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with a being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations that account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.

Original languageEnglish (US)
Article number252108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number25
DOIs
StatePublished - Sep 13 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor'. Together they form a unique fingerprint.

Cite this