A possible resolution of the valence-band offset controversy in HgTe/CdTe superlattices

P. M. Hui, H. Ehrenreich, N. F. Johnson

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

The valence-band offset controversy in HgTe/CdTe superlattices can be simply resolved by showing, as we do here, that a large offset value (Λ> 300 meV) is indeed consistent with the magneto-optical data of Berroir et al. [Phys. Rev. B34, 891 (1986)]. The superlattice (100 A HgTe/36 A CdTe) becomes semimetallic (SM) when A is increased from small values, but reverts to semiconducting (SC) behavior for Λ> 300 meV. The band gap in this new regime occurs at the superlattice Brillouin zone face. The sensitivity to layer thicknesses of such SC→SM→SC transitions is discussed and experiments suggested.

Original languageEnglish (US)
Pages (from-to)424-426
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number2
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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