TY - GEN
T1 - A novel circular SAW (surface acoustic wave) device in CMOS
AU - Tigli, Onur
AU - Zaghloul, Mona E.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The design, modeling and fabrication of a novel circular SAW device in CMOS (Complementary Metal Oxide Semiconductor) are introduced. The results obtained in [1] demonstrate that it is possible to design and fabricate SAW based sensors in CMOS with comparable performance to conventional devices. It is of great interest to improve the transfer characteristics and to reduce the losses of conventional rectangular SAW architectures for obtaining highly selective sensor platforms. Performance deficiencies of regular SAW devices in CMOS were addressed with this new architecture for improved performance. A 3D model for the novel architecture was constructed. A detailed finite element analysis was carried out to examine the transient, harmonic and modal behavior of the new architecture under excitation. The devices were fabricated in 0.5 μm AMI technology and the post processing was carried out using the methods developed in [2]. The results demonstrate that it is possible to obtain highly oriented surface acoustic waves by using the novel circular architecture. A 17.4 dB insertion loss and a 10.8 MHz of 3dB bandwidth improvement were achieved when compared to a conventional rectangular device.
AB - The design, modeling and fabrication of a novel circular SAW device in CMOS (Complementary Metal Oxide Semiconductor) are introduced. The results obtained in [1] demonstrate that it is possible to design and fabricate SAW based sensors in CMOS with comparable performance to conventional devices. It is of great interest to improve the transfer characteristics and to reduce the losses of conventional rectangular SAW architectures for obtaining highly selective sensor platforms. Performance deficiencies of regular SAW devices in CMOS were addressed with this new architecture for improved performance. A 3D model for the novel architecture was constructed. A detailed finite element analysis was carried out to examine the transient, harmonic and modal behavior of the new architecture under excitation. The devices were fabricated in 0.5 μm AMI technology and the post processing was carried out using the methods developed in [2]. The results demonstrate that it is possible to obtain highly oriented surface acoustic waves by using the novel circular architecture. A 17.4 dB insertion loss and a 10.8 MHz of 3dB bandwidth improvement were achieved when compared to a conventional rectangular device.
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U2 - 10.1109/ICSENS.2007.4388439
DO - 10.1109/ICSENS.2007.4388439
M3 - Conference contribution
AN - SCOPUS:48349088010
SN - 1424412617
SN - 9781424412617
T3 - Proceedings of IEEE Sensors
SP - 474
EP - 477
BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Y2 - 28 October 2007 through 31 October 2007
ER -