3-Terminal pMTJ reduces critical current and switching time

Lanting Cheng, Sakhrat Khizroev, Ping Liang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

To realize the potential of magnetic tunnel junctions (MTJs) for high-density non-volatile memory and non-volatile logic, the critical current to switch the magnetization must be lowered. This paper presents a simulation study of a new structure of perpendicular MTJs (pMTJs) which divides the fixed layer into two coupling parts. We investigate the TMR and the critical current density of this new pMTJ by micromagnetic simulation using OOMMF for various cases. The simulation results show that this new structure pMTJ has lower critical current and shorter switching time compared to the conventional three-layer MTJs.

Original languageEnglish (US)
Pages (from-to)5-10
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume358-359
DOIs
StatePublished - May 2014

Keywords

  • Magnetic tunneling junction
  • Micromagnetic simulation
  • Spin transfer torque
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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